unisonic technologies co., ltd 12n06z power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-767.a 12 a , 60v n-channel power mosfet ? description the utc 12n06z is an n-channel enhancement mode power mosfet using utc? s advanced te chnology to provide customers with a minimum on-state resistanc e, high switching speed and low gate charge. ? features * 12a, 60v, r ds(on) < 0.10 ? @v gs = 10v * high switching speed * low gate charge * halogen free ? symbol 1 to-252 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 12n06zl-tn3-r 12N06ZG-TN3-R to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
12n06z power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-767.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current continuous t c = 25c i d 12 a pulsed i dm 48 a total dissipation at t c = 25c p tot 30 w peak diode recovery dv/dt dv/dt 15 v/ns avalanche energy e as 140 mj junction temperature t j -55~+175 c storage temperature range t stg -55~+175 c notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient max ja 100 c/w junction to case max jc 5 c/w ? electrical characteristics (t case =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250 a 60 v drain-source leakage current i dss v ds =60v 1 a gate- source leakage current forward i gss v gs = 20v 10 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 3 v static drain-source on-state resistance r ds ( on ) v ds =10v, i d =6a 0.08 0.1 ? on state drain current i d ( on ) v gs =10v, v ds =1v 5 30 a dynamic parameters input capacitance c iss v ds =25v, f=1mhz, v gs =0v 350 pf output capacitance c oss 75 pf reverse transfer capacitance c rss 30 pf switching parameters total gate charge q g v gs =5v, i d =12a, v dd =48v 7.5 10 nc gate to source charge q gs 2.5 nc gate to drain charge q gd 3.0 nc turn-on delay time t d ( on ) v dd =30v, i d =6a, r g =4.7 ? , v gs =0~10v 10 ns rise time t r 35 ns turn-off delay time t d ( off ) 20 ns fall-time t f 13 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 12 a maximum body-diode pulsed current i sm 48a drain-source diode forward voltage v sd i s =12a 1.5 v
12n06z power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-767.a ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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